Electronic structure of Fibonacci Si δ-doped GaAs

Electronic Structure of Fibonacci Si Δ-doped Gaas Typeset Using Revt E X 1

We study the electronic structure of a new type of Fibonacci superlattice based on Si δ-doped GaAs. Assuming that δ-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to δ-doping is obtained by means of the Thomas-Fermi appr...

Electronic structure of realistically extended atomistically resolved disordered Si : P δ - doped layers

Sunhee Lee,1,* Hoon Ryu,1,2,† Huw Campbell,3,‡ Lloyd C. L. Hollenberg,4 Michelle Y. Simmons,3 and Gerhard Klimeck1 1Network for Computational Nanotechnology (NCN), Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906, USA 2Supercomputing Center, Korea Institute of Science and Technology Information (KISTI) 52-11 Eoeun-dong, Yuseong-gu, Daejeon 305-806, Republic of Korea...

A photoluminescence study of δ-doped GaAs

Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...

Gallium Oxide And Gadolinium Gallium Oxide Insulators On Si δ-Doped GaAs / AlGaAs Heterostructures

Electron mobility in Si delta doped GaAs

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.